1H4G [BL Galaxy Electrical]
HIGH EFFICIENCY RECTIFIER; 高效率整流
| 型号： | 1H4G |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | HIGH EFFICIENCY RECTIFIER |
| 文件： | 总2页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CURRENT 1.0 Ampere
VOLTAGE 50 to 1000 Volts
1H1G THRU 1H8G
Features
· Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
R-1
· Low forward voltage drop
· High current capability
· High reliability
0.102(2.6)
0.091(2.3)
DIA.
0.787(20.0)
MIN.
· Low power loss, high effciency
· High surge current capability
· High speed switching
· Low leakage
0.126(3.2)
0.106(2.7)
Mechanical Data
· Case : R-1 molded plastic body
· Epoxy : UL94V-0 rate flame retardant
· Lead : Plated axial lead solderable per MIL-STR-750,
method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
0.787(20.0)
MIN.
0.025(0.65)
0.021(0.55)
DIA.
Dimensions in inches and (millimeters)
· Weight : 0.007 ounce, 0.19 gram
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
1H1G 1H2G 1H3G 1H4G 1H5G 1H6G 1H7G 1H8G
Symbols
Units
Maximum recurrent peak reverse voltage
Maximum RMS voltage
V
RRM
RMS
50
35
50
100
70
200
140
200
300
210
300
400
280
400
600
420
600
800
560
800
1000
700
Volts
Volts
Volts
V
Maximum DC blocking voltage
V
DC
100
1000
Maximum average forward rectified current
0.375"(9.5mm) lead length TA=55℃
I
(AV)
1.0
Amp
Amps
Volts
Peak forward surge current 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
25.0
1.3
IFSM
Maximum instantaneous forward voltage
at 1.0A
V
F
1.0
1.7
Maximum DC Reverse Current at rated DC
blocking voltage
5.0
μA
IR
Maximum full load reverse current full cycle
average. 0.375"(9.5mm) lead length at
100
TL=55℃
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Trr
50
20
70
15
ns
C
J
pF
Operating Junction and Storage temperature
Range
TJ
℃
-65 to +150
TSTG
Notes:
(1) Test conditions: I
F=0.5A, IR=1.0A, Irr=0.25A.
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.
RATINGS AND CHARACTERISTIC CURVES 1H1G THRU 1H8G
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.1-TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTIC
2.0
50Ω
NON INDUCTIVE
10Ω
NON INDUCTIVE
Trr
+0.5A
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0.375"(9.5mm) LEAD LENGTH
( + )
D.U.T.
PULSE
GENERATOR
(NOTE2)
0
25Vdc
(APPROX)
1.0
-0.25A
(
)
1Ω
OSCILLOSCOPE
(NOTE1)
NON IN-
DUCTIVE
-1.0A
NOTES:1.Rise Time=7ns max. input impedance=1
megohm 22pF
1cm
0
2.Rise Time=10ns max. source impedance =
50 ohms
SET TIME BASE FOR 20/30 ns/cm
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE ( ℃)
FIG.3-TYPICAL FORWARD CHARACTERISTICS
FIG.4-TYPICAL REVERSE CHARACTERISTICS
10
1000
TA=125℃
100
10
1.0
0.1
TA=25℃
1.0
0.1
0.01
TA=25℃
PULSE WIDTH=300µS
1% DUTY CYCLE
0
20
40
60
80
100
120
140
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
FIG.5-MAXIMUM NON-REPETITIVE
NUMBER OF CYCLES AT 60Hz
FIG6-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE. (V)
FORWARD SURGE CURRENT
40
70
60
35
TA=25℃
8.3m SINGLE HALF SINE WAVE
(JEDEC Method)
30
25
20
50
40
TJ=25℃
30
20
1H1G-1H6G
15
10
5
10
0
1H7G-1H8G
0.5
1
5
10
50
100
0.1
1
2
5
10 20
100 200
1000
50
相关型号：
1H4G-AP
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN
MCC
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